QS5U26
Transistor
1000
100
100
10
125 ° C
75 ° C
25 ° C
? 25 ° C
10
1
0.1
125 ° C
75 ° C
25 ° C
0.01
1
0.001
? 25 ° C
0.1
0
0.1
0.2
0.3
0.4
0.5
0.0001
0
10
20
30
40
FORWARD VOLTAGE : V F (V)
Fig.10 Forward Current
vs. Forward Voltage
REVERSE VOLTAGE : V R (V)
Fig.11 Reverse Current
vs. Reverse Voltage
Notice
SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature,
and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low V F characteristics and therefore, higher leak current. Please consider enough the surrounding
temperature, generating heat of MOSFET and the reverse current.
Rev.B
4/4
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相关代理商/技术参数
QS5U27 制造商:ROHM 制造商全称:Rohm 功能描述:Small switching (−20V, −1.5A)
QS5U27TR 功能描述:MOSFET P-CH 20V 1.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
QS5U28 制造商:ROHM 制造商全称:Rohm 功能描述:Small switching (−20V, −2.0A)
QS5U28_06 制造商:ROHM 制造商全称:Rohm 功能描述:2.5V Drive PchSBD MOS FET
QS5U28TR 功能描述:MOSFET P-CH 20V 2A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
QS5U33 制造商:ROHM 制造商全称:Rohm 功能描述:4V Drive Pch+SBD MOSFET
QS5U33TR 功能描述:MOSFET 30V; 2A; N-Channel Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
QS5U34 制造商:ROHM 制造商全称:Rohm 功能描述:1.8V Drive Nch+SBD MOSFET